Co2O3掺杂对ZnO压敏电阻性能的影响 OACSTPCD
Effects of Co2O3 addition on microstructure and electrical properties of ZnO varistor
运用传统工艺制备不同质量分数Co2O3掺杂的ZnO压敏电阻阀片.采用扫描电镜和X射线衍射仪对样品的显微结构进行分析，研究了Co2O3掺杂质量分数对ZnO压敏电阻显微结构的影响，讨论了其电学性能与Co2O3掺杂摩尔分数的关系.结果表明，随着Co2O3摩尔分数的增大，晶粒尺寸越来越小，衍射角变大，晶面间距减小；压敏电压升高，非线性指数变大.
The ZnO varistor valves with different contents of Co2O3 doped were prepared by means of conventional technology. The microstructure of ZnO samples was analyzed by scan ning electron microscopy ( SEM ) and X - ray diffraction ( XRD ). The effect of Co2 O3 dopant content on the microstructure of samples was studied, the relationship between electrical properties and contents of Co2O3 was discussed. The rasults showed that with the contents of Co2O3 increasing…查看全部>>
陈春天;姜永健;李多;肖海峰
哈尔滨理工大学应用科学学院，哈尔滨150080哈尔滨理工大学应用科学学院，哈尔滨150080哈尔滨理工大学应用科学学院，哈尔滨150080哈尔滨理工大学应用科学学院，哈尔滨150080
信息技术与安全科学
氧化锌；扫描电镜；X射线衍射仪；压敏电阻；微观结构
zinc oxide scanning electron microscopy X -ray diffraction varistor micro-structure
《哈尔滨商业大学学报（自然科学版）》 2011 (3)
327-330,4
哈尔滨市科技创新人才专项基金(2009RFXXG205)
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