红外与毫米波学报2011，Vol.30Issue(4)：293-296,4.
PbTe中红外光伏探测器
PbTe photovoltaic mid-IR detectors
摘要
Abstract
PbTe thin films on CdZnTe(111) substrates were epitaxially grown by Molecular Beam Epitaxy. Prototype photovoltaic mid-IR detectors were fabricated using ZnS thin films as insulated materials, In2O3 as transparent conductive thin films, and metallic In thin films as the Ohmic contact electrodes. The wavelength response of the detectors covers the range from 1.5 urn to 5.5 μm at 77 K, and the detectivity is higher than 2×1010 cm ?Hz1/2W-1. The peak detectivity D'λ calculated using R0A data reaches 4.35×1010 cm ? Hz1/2W-1 at 77 K. The cut-off wavelength blue shifts and the detectivity decreases as the measurement temperatures rise. The main factors that influence the detectivity and R0A parameters are discussed.关键词
PbTe/光伏探测器/中红外Key words
PbTe/ photovoltaic detector/ mid-IR分类
电子信息工程引用本文复制引用
魏晓东,方维政,戴宁,蔡春峰,张兵坡,胡炼,吴惠桢,张永刚,冯靖文,林加木,林春..PbTe中红外光伏探测器[J].红外与毫米波学报,2011,30(4):293-296,4.基金项目
国家自然科学基金(10974174,91021020) （10974174,91021020）
国家重大基础研究计划(2011CB925603) （2011CB925603）
浙江省自然科学基金(Z6100117) （Z6100117）
