金刚石与磨料磨具工程2011，Vol.31Issue(4)：10-14,22,6.DOI:10.3969/j.issn.1006-852X.2011.04.003
活性成分对金刚石膜沉积速率和质量的影响
Influence of active composition on the growth rate and quality of diamond film
摘要
Abstract
The diamond film with excellent quality can be synthesized by using microwave plasma chemical vapor deposition ( MPCVD) method. However, the growth rate of diamond film is very low with the conventional gas system of CH4-H2. In order to improve its growth rate and quality, the influence of different microwave power, different concentration of carbon radicals and gas pressure in C2H5OH-H2 ,CH4-H2-Ar CH4-H2-N2 gas systems on the resistivity, growth rate and surface morphology of diamond film were studied. The results show that the growth rate of diamond film is up to 0. 57,0. 59,0. 58 μm/h respectively with gas systems containing active compositions (0, Ar, N) , which nearly double that of CH4-H2 gas system, and the diamond film is of high purity (that relative content of diamond C-C bond is more than 80% ) , perfect crystal shape and high resistivity(1010 Ω · Cm). In addition, the grain size of diamond can be reduced by doping argon and nitrogen. Accordingly, the addition of active compositions is an effective method to improve the growth rate and quality of MPCVD diamond film.关键词
金刚石膜/沉积速率/微波等离子体化学气相沉积Key words
diamond film/ deposition rate/microwave plasma chemical vapor deposition分类
化学化工引用本文复制引用
李德贵,苟立,冉均国..活性成分对金刚石膜沉积速率和质量的影响[J].金刚石与磨料磨具工程,2011,31(4):10-14,22,6.基金项目
国家自然科学基金资助项目(10275046) （10275046）
百色学院引进人才启动资金资助项目 （）
