电子器件2011，Vol.34Issue(4)：367-369,3.DOI:10.3969/j.issn.1005-9490.2011.04.004
一种CMOS工艺离子敏场效应型晶体管的模型
Model of CMOS Ion-Sensitive Field Effect Transistor
摘要
Abstract
An ion-sensitive field effect transistor(ISFET)can be achieved by CMOS technology. If a polysilicon layer is kept on the oxide layer of the gate and connected to an external metal layer as a floating gate, a floating gate ISFET can be realized. Based on the sensing mechanism of ISFET and the site-binding model,the physical model of the floating gate ISFET is established from HSPICE. The influence of the membrane resistance, capacitance and the line parasitic capacitance on the dynamic characteristics of delay time and hysteresis is investigated, its static characteristics are also simulated and the results agree with experiments.关键词
离子敏场效应晶体管/器件模型/静态特性/动态特性Key words
ion-sensitive field effect transistor/device model/ static characteristics/dynamic characteristics分类
信息技术与安全科学引用本文复制引用
卫铭斐,于军琪,陈登峰..一种CMOS工艺离子敏场效应型晶体管的模型[J].电子器件,2011,34(4):367-369,3.基金项目
陕西省教育厅专项科研计划项目(02JC50) （02JC50）
