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CMOS电容式湿度传感器特性研究

刘岩 赵成龙 聂萌 秦明

电子器件2011,Vol.34Issue(4):379-382,4.
电子器件2011,Vol.34Issue(4):379-382,4.DOI:10.3969/j.issn.1005-9490.2011.04.007

CMOS电容式湿度传感器特性研究

A Study on the Performance of a CMOS Capacitive Humidity Sensor

刘岩 1赵成龙 1聂萌 1秦明1

作者信息

  • 1. 东南大学MEMS教育部重点实验室,南京210096
  • 折叠

摘要

Abstract

A study on the performance of a CMOS capacitive humidity sensor is presented. This humidity sensor was fabricated with the standard CMOS technology and the MEMS post-processing step. To test the response time of the humidity sensor,an experimental set-up was designed. As can be seen from the measurements,the sensor shows a good linearity over the testing range from 25% RH to 95% R.H. The maximum hysteresis of the sensor is 2% RH, at 75%RH. And the sensor has a short response time. No obvious drift can be found after the sensor was tested in a short period.

关键词

电容式传感器/湿度传感器/CMOS 工艺/MEMS

Key words

capacitive sensor/humidity sensor/CMOS technology/MEMS

分类

计算机与自动化

引用本文复制引用

刘岩,赵成龙,聂萌,秦明..CMOS电容式湿度传感器特性研究[J].电子器件,2011,34(4):379-382,4.

基金项目

国家863高技术研究发展计划项目(2009 AA04Z322) (2009 AA04Z322)

国家自然科学基金项目(60901009) (60901009)

电子器件

OA北大核心CSTPCD

1005-9490

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