表面技术2011，Vol.40Issue(4)：62-64,75,4.
退火温度对Al(Ce)诱导Si薄膜晶化过程的影响研究
Study Effect of Annealing Temperature on Crystallization Process of Al(Ce) Induced Si Films
郭佳丽1
作者信息
- 1. 深圳市天地(集团)股份有限公司东建混凝土分公司,深圳518117
- 折叠
摘要
Abstract
Based on aluminum-induced crystallization method, Al-Si and Al(Ce)-Si films were deposited by DC magnetron sputtering using the pure Al, pure Si and Al-Ce targets. Crystallization and growth process of Al-Si and Al (Ce)-Si films were analyzed by X-ray diffraction(XRD) method after annealing at different temperatures. Combining with established grown model of Si films, influence of Al and lanthanon Ce to the anneal crystalline process of Si films were investigated. The results show that the growth trend of Si atoms along (111) crystal plane is improved with Ce doped. The crystal size of Si reduces significantly after annealing at 500 °C in Al(Ce) induced crystallization compared with Al induced Si film, and the main reason is that aluminum particles which disperse into Si film reduce in size but increase in density.关键词
稀土Ce/Si薄膜/退火/晶化过程Key words
lanthanon Ce/ Si films/ annealing/ crystallization process分类
通用工业技术引用本文复制引用
郭佳丽..退火温度对Al(Ce)诱导Si薄膜晶化过程的影响研究[J].表面技术,2011,40(4):62-64,75,4.
