液晶与显示2011，Vol.26Issue(4)：486-489,4.DOI:10.3788/YJYXS20112604.0486
图形化硅纳米线阵列场发射阴极的制备及其场发射性能
Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode
摘要
Abstract
The patterned Si nanowire arrays have been successfully fabricated by combining photolithography and metal-assisted Si chemical etching. The morphologies of the arrays are characterized by scanning electron microscopy (SEM). The experimental results reveal that field electron emission from the arrays can be obtained. The patterned Si nanowire arrays is beneficial to patterned electron beams with a low divergence angle. The investigation results provided an efficient way to fabricate the patterned Si nanowire arrays electron sources for various vacuum microelectron devices with some advantages such as, simple process and suitable for IC technology.关键词
图形化的硅纳米线阵列/金属援助硅化学刻蚀/场发射Key words
patterned Si nanowire arrays/ metal-assisted Si chemical etchings field emission分类
数理科学引用本文复制引用
吕文辉,张帅..图形化硅纳米线阵列场发射阴极的制备及其场发射性能[J].液晶与显示,2011,26(4):486-489,4.基金项目
广东高校优秀青年创新人才培育项目(No.LYM08075) （No.LYM08075）
浙江大学硅材料国家重点实验室开放课题(No.SKL2010-5) （No.SKL2010-5）
