强激光与粒子束2011，Vol.23Issue(8)：2141-2144,4.DOI:10.3788/HPLPB20112308.2141
高压快速离化半导体开关及其脉冲压缩特性
High voltage semiconductor fast ionization device and its properties of pulse compression
摘要
Abstract
The special structure and working principle of all-solid-state fast ionization device (FID) are studied. The compression characteristics in pulse voltage amplitude and pulse width of FID are given through experiment study at different exterior bias voltages. The experimental result of transforming the input pulse of voltage 1. 7 kV, width 4 ps, repetition frequency 2 kHz into the output pulse of voltage 1 985 V, width 90 ns, repetition frequency 2 kHz is obtained from FID compression under 50 Ω load.关键词
高压脉冲/快速离化器件/半导体开关/等离子体/脉冲压缩Key words
high voltage pulse/fast ionization devices/semiconductor switch/plasma/pulse compression分类
信息技术与安全科学引用本文复制引用
梁勤金,石小燕,潘文武..高压快速离化半导体开关及其脉冲压缩特性[J].强激光与粒子束,2011,23(8):2141-2144,4.基金项目
国家高技术发展计划项目 （）
