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252Cf源和重离子加速器对FPGA的单粒子效应

范雪 李平 李威 杨志明 张斌 郭红霞 姚志斌

强激光与粒子束2011,Vol.23Issue(8):2229-2233,5.
强激光与粒子束2011,Vol.23Issue(8):2229-2233,5.DOI:10.3788/HPLPB20112308.2229

252Cf源和重离子加速器对FPGA的单粒子效应

Single event effects on FPGA of californium-252 and heavy-ion accelerator

范雪 1李平 2李威 1杨志明 2张斌 1郭红霞 2姚志斌1

作者信息

  • 1. 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054
  • 2. 成都华微电子科技有限公司,成都610041
  • 折叠

摘要

Abstract

Single event effects(SEEs) test results on a static random access memory(SRAM)-based FPGA with 100 k sys tem gates using californium-252 (252Cf) and the HI-13 tandem-accelerator are presented. The results including the static single e vent upset(SEU) cross-sections and the linear energy transfer(LET) threshold of single event latchup(SEL) were quantitatively compared and analyzed. The results showed that the SEU cross-sections using 252 Cf were an order of magnitude less than the ones using the accelerator. SEL was not observed when the FPGA was exposed to the 252Cf, while SEL LET threshold could be meas ured when using the heavy-ion accelerator. Therefore, 252Cf is not an ideal radioactive source to test SEL of CMOS circuits fabri cated with advanced technologies for experimental simulation of the space environment.

关键词

现场可编程门阵列/单粒子效应/252 Cf源/重离子加速器/线性能量转移阈值

Key words

field programmable gate array /single event effect/californium-252/heavy-ion accelerator/linear energy transfer threshold

分类

数理科学

引用本文复制引用

范雪,李平,李威,杨志明,张斌,郭红霞,姚志斌..252Cf源和重离子加速器对FPGA的单粒子效应[J].强激光与粒子束,2011,23(8):2229-2233,5.

强激光与粒子束

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