人工晶体学报2011，Vol.40Issue(4)：882-886,5.
热丝CVD法制备a-Si1-xCx薄膜的光电性能研究
Investigation on Photoelectrical Properties of a-Si1 -xCx Films Deposited by Hot-wire CVD
摘要
Abstract
Amorphous Si1 _xCx(a-Si1-xCx) thin films were deposited from a silane (SiH4), acetylene ( C2 H2) and hydrogen ( H2 ) gas mixture by hot wire chemical vapor deposition ( HWCVD) technique. The photoelectrical properties of the a-S1-xCx thin films were systematically studied by FTIR, UV-VIS spectra-photometer, four-point probes, surface profile measuring system and Hall-effect measurement equipment. The results indicated that as the C2H2 flow rate increasing, the carbon content and the optical band gap of p-a-Si1_XCX thin films had the tendency to rise, where the band gap increased from 1.7 eV to2. 1 eV. Besides, the hole concentration of the B doped a-Si1_XCX thin films increased significantly as the flow rate ratio of B2 H6 to SiH4 increasing, whereas the hall mobility of the film showed a contrary variation tendency. As a comprehensive result, the resistivity of the p-a-Si1_xCx thin films decreased rapidly at first, then gradually reached a minimal value of 1.94 Ω· Cm and finally went upward slightly.关键词
热丝CVD/非晶碳化硅/光电性能Key words
hot-wire CVD/a-Si1-xCx/photoelectrical properties分类
数理科学引用本文复制引用
程彬,沈鸿烈,吴天如,丁滔,肖少文,陆婷..热丝CVD法制备a-Si1-xCx薄膜的光电性能研究[J].人工晶体学报,2011,40(4):882-886,5.基金项目
国家高技术研究发展计划(863)(2006AA03Z219)资助项目 （863）
江苏高校优势学科建设工程资助项目 （）
国家大学生创新性实验计划资助项目(101028724) （101028724）
