人工晶体学报2011，Vol.40Issue(4)：1048-1052,5.
非磁性元素掺杂ZnO稀磁半导体研究进展
Recent Progress on Non-magnetic Elements Doped ZnO Diluted Magnetic Semiconductors
摘要
Abstract
The ferromagnetism origin and mechanism was the continuing research hotspots and difficulty issues in the field of ZnO-based diluted magnetic semiconductors. In general, ferromagnetic 3d transition metals doped ZnO tend to form ferromagnetic secondary phase, while non-magnetic elements doped ZnO will not introduce this problem and have been regarded as ideal system for investigating theferromagnetism origin and mechanism. Above room-temperature ferromagnetism has been theoreticallyprectied in such systems. In this paper, the recent progress of non-magnetic elements doped ZnO-baseddiluted magnetic semiconductor was reviewed.关键词
稀磁半导体/ZnO/非磁性元素掺杂/室温铁磁性Key words
diluted magnetic semiconductors/ZnO/non-magnetic elements doping/room-temperature ferromagnetism分类
信息技术与安全科学引用本文复制引用
卓世异,刘学超,熊泽,陈之战,杨建华,施尔畏..非磁性元素掺杂ZnO稀磁半导体研究进展[J].人工晶体学报,2011,40(4):1048-1052,5.基金项目
国家自然科学基金(50772122,51002176) （50772122,51002176）
