人工晶体学报2011，Vol.40Issue(4)：1065-1070,1082,7.
一种多喷淋头式MOCVD反应器的设计与数值模拟
Design and Simulation of a Multi-showerheads MOCVD Reactor
摘要
Abstract
A novel MOCVD reactor with multi-showerheads was proposed. For the new reactor design, considering the thermal radiation and the chemical reactions, a numerical simulation for MOCVD of GaN growth was conducted. The flow, temperature, concentration fields, parasitic deposition on the nozzle wall and GaN growth rate were predicted. The effects of reactor geometry on the uniformity of the growth were studied. Simulation results showed that most regions have a uniform temperature field and a goodstagnation flow in substrate surface, and by analyzing the concentration field and GaN growth rate, it was shown that MMGa is the main reaction precursors for the thin film growth. Under a wide range of geometric parameters, such as optimizing the reactor height H, gap h between nozzle and susceptor, nozzle radii R, it was finally obtained the conditions to raise the growth rate and uniformity of thin film.关键词
多喷淋头/MOCVD/反应器设计/GaN生长/数值模拟Key words
multi-shower heads/MOCVD/reactor design/GaN growth/numerical simulation分类
数理科学引用本文复制引用
于海群,左然,陈景升..一种多喷淋头式MOCVD反应器的设计与数值模拟[J].人工晶体学报,2011,40(4):1065-1070,1082,7.基金项目
国家自然科学基金(60376006) （60376006）
江苏省研究生创新计划项目(CX10B-260Z) （CX10B-260Z）
