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A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

Ge Qin Chen Xiaojuan Luo Weijun Yuan Tingting Pang Lei Liu Xinyu

半导体学报2011，Vol.32Issue(8)：70-73,4.

半导体学报2011，Vol.32Issue(8)：70-73,4.DOI:10.1088/1674-4926/32/8/085001

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

Ge Qin ¹Chen Xiaojuan ¹Luo Weijun ¹Yuan Tingting ¹Pang Lei ¹Liu Xinyu¹

作者信息

1. Key Laboratory of Microwave Devices & Integrated Circuit, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China
折叠

摘要

Abstract

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD.Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W),a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse conditionwhen operated at Vds =25 V and Vgs =-4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.

关键词

Ku-band/ AlGaN/GaN HEMTs/ power amplifier/ monolithic/ power density

Key words

Ku-band/ AlGaN/GaN HEMTs/ power amplifier/ monolithic/ power density

引用本文复制引用

Ge Qin,Chen Xiaojuan,Luo Weijun,Yuan Tingting,Pang Lei,Liu Xinyu..A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier[J].半导体学报,2011,32(8):70-73,4.

基金项目

Project supported by the National Basic Research Program of China (No.2010CB327503) and the National Natural Science Foundation of China (No.60890191). （No.2010CB327503）

半导体学报

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ISSN：1674-4926

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