半导体学报2011，Vol.32Issue(8)：74-79,6.DOI:10.1088/1674-4926/32/8/085002
A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
摘要
Abstract
A new,low complexity,ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA),designed in a chartered 0.18μm RFCMOS technology,is presented.The ultra-wideband LNA consists of only two simple amplifiers with an inter-stage inductor connected.The first stage utilizing a resistive current reuse and dual inductive degeneration technique is used to attain a wideband input matching and low noise figure.A common source amplifier with an inductive peaking technique as the second stage achieves high flat gain and wide -3 dB bandwidth of the overall amplifier simultaneously.The implemented ultra-wideband LNA presents a maximum power gain of 15.6 dB,and a high reverse isolation of -45 dB,and good input/output return losses are better than -10 dB in the frequency range of 3.1-10.6 GHz.An excellent noise figure (NF) of 2.8-4.7 dB was obtained in the required band with a power dissipation of 14.1 m W under a supply voltage of 1.5 V.An input-referred third-order intercept point (IIP3) is -7.1 dBm at 6 GHz.The chip area,including testing pads,is only 0.8 × 0.9 mm2.关键词
CMOS/ low noise amplifier/ ultra-wideband/ current reuse/ common source/ noise figureKey words
CMOS/ low noise amplifier/ ultra-wideband/ current reuse/ common source/ noise figure引用本文复制引用
Wang Chunhua,Wan Qiuzhen..A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers[J].半导体学报,2011,32(8):74-79,6.基金项目
Project supported by the National Natural Science Foundation of China (No.60776021) and the Open Fund Project of Key Laboratory in Hunan Universities,China (No.09K011). （No.60776021）
