半导体学报2011，Vol.32Issue(8)：5-9,5.DOI:10.1088/1674-4926/32/8/082002
Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition
Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition
摘要
Abstract
Semiconducting Mg2Si films were synthesized on silicon (11 1) substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas,and the effects of heat treatment on the formation and microstructure of Mg2Si films were investigated.The structural and morphological properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM),respectively.The results show that the crystal quality of Mg2Si films depends strongly on the annealing temperature,the annealing time and the deposited magnesium film thickness.Annealing at 400 ℃ for 5 h is optimal for the preparation of Mg2Si film.XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms,and the evolution of surface features on growing films is very dependent on the annealing temperature and time.关键词
thin film/ magnetron sputtering/ annealing/ X-ray diffraction/ scanning electron microscopyKey words
thin film/ magnetron sputtering/ annealing/ X-ray diffraction/ scanning electron microscopy引用本文复制引用
Xiao Qingquan,Xie Quan,Chen Qian,Zhao Kejie,Yu Zhiqiang,Shen Xiangqian..Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition[J].半导体学报,2011,32(8):5-9,5.基金项目
Project supported by the National Natural Science Foundation of China (No.60766002),the Special Funds for International Cooperation of the Ministry of Science and Technology of China (No.2008DFA52210),the Funds of Information Industry Department of Guizhou Province,China (No.0831),the Natural Science Foundation of Guizhou Province,China (Nos.2059,2323),the Guiyang Science and Technology Bureau (No.15-3),and the Introducing Talents Foundation for the Doctor of Guizhou University (No.032). （No.60766002）
