半导体学报2011，Vol.32Issue(8)：10-13,4.DOI:10.1088/1674-4926/32/8/083001
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
摘要
Abstract
Molecular beam epitaxy growth ofa bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot (BQD) structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9 × 109 to 1.4 × 1010 cm-2.The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.关键词
InAs bilayer quantum dots/ molecular beam epitaxy/ long wavelength/ photoluminescenceKey words
InAs bilayer quantum dots/ molecular beam epitaxy/ long wavelength/ photoluminescence引用本文复制引用
Zhu Yan,Li Mifeng,He Jifang,Yu Ying,Ni Haiqiao,Xu Yingqiang,Wang Juan,He Zhenhong,Niu Zhichuan..GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy[J].半导体学报,2011,32(8):10-13,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.10734060,90921015) and the National Basic Research Program of China (Nos.2007CB936304,2010CB327601). （Nos.10734060,90921015）
