半导体学报2011，Vol.32Issue(8)：14-17,4.DOI:10.1088/1674-4926/32/8/083002
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
摘要
Abstract
InGaN filmsweredepositedon(0001)sapphiresubstrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy (SEM) and atomic force microscopy (AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.关键词
InGaN film/ MOCVD/ surface morphology/ V-defectsKey words
InGaN film/ MOCVD/ surface morphology/ V-defects引用本文复制引用
Tao Tao,Han Ping,Shi Yi,Zheng Youdou,Zhang Zhao,Liu Lian,Su Hui,Xie Zili,Zhang Rong,Liu Bin,Xiu Xiangqian,Li Yi..Surface morphology and composition studies in InGaN/GaN film grown by MOCVD[J].半导体学报,2011,32(8):14-17,4.基金项目
Project supported by the Special Funds for Major State Basic Research Project,China (No.2011CB301900),the Hi-Tech Research Project (No.2009AA03A198),the National Natural Science Foundation of China (Nos.60990311,60721063,60906025,60936004),the Natural Science Foundation of Jiangsu Province,China (Nos.BK2008019,BK2009255,BK2010178),and the Research Funds from NJU-Yangzhou Institute of Opto-Electronics,China. （No.2011CB301900）
