半导体学报2011，Vol.32Issue(8)：18-22,5.DOI:10.1088/1674-4926/32/8/083003
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure
摘要
Abstract
Electrical properties of InxAl1-xN/AlN/GaN structure are investigated by solving coupled Schr(o)dinger and Poisson equations self-consistently.The variations in internal polarizations in InxAl1-xN with indium contents are studied and the total polarization is zero when the indium content is 0.41.Our calculations show that the two-dimensional electron gas (2DEG) sheet density will decrease with increasing indium content.There is a critical thickness for AlN.The 2DEG sheet density will increase with InxAl1-xN thickness when the AlN thickness is less than the critical value.However,once the AlN thickness becomes greater than the critical value,the 2DEG sheet density will decrease with increasing barrier thickness.The critical value of AlN is 2.8 nm for the lattice-matched In0.18Al0.82N/AlN/GaN structure.Our calculations also show that the critical value decreases with increasing indium content.关键词
GaN/ InAlN/ HEMT/ 2DEG/ polarizationKey words
GaN/ InAlN/ HEMT/ 2DEG/ polarization引用本文复制引用
Bi Yang,Wang Xiaoliang,Xiao Hongling,Wang Cuimei,Yang Cuibai,Peng Enchao,Lin Defeng,Feng Chun,Jiang Lijuan..Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure[J].半导体学报,2011,32(8):18-22,5.基金项目
Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No.YYYJ-0701-02),the National Natural Science Foundation of China (Nos.60890193,60906006),the State Key Development Program for Basic Research of China (Nos.2006CB604905,2010CB327503),and the Knowledge Innovation Program of the Chinese Academy of Sciences (Nos.ISCAS2008T01,ISCAS2009L01,ISCAS2009L02). （No.YYYJ-0701-02）
