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Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

Yuan Lihua Wang Daobin Chen Yuhong Zhang Cairong Pu Zhongsheng Zhang Haimin

半导体学报2011,Vol.32Issue(8):1-4,4.
半导体学报2011,Vol.32Issue(8):1-4,4.DOI:10.1088/1674-4926/32/8/082001

Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

Yuan Lihua 1Wang Daobin 1Chen Yuhong 1Zhang Cairong 1Pu Zhongsheng 1Zhang Haimin1

作者信息

  • 1. School of Science, Lanzhou University of Technology, Lanzhou 730050, China
  • 折叠

摘要

Abstract

Energy levels of a donor impurity in the ZnO parabolic quantum well under the magnetic field are investigated using the variational method.The binding energy of the ground state,the energies of 2p± state and 1s → 2p± transition energies of a hydrogenic donor in the ZnO parabolic quantum well are numerically calculated as a function of the strength of magnetic field for different parabolic potential fields.The results show that the external magnetic field has an obvious influence on the binding energies and the 1s → 2p± transition energies of a hydrogenic donor.The 1s to 2p± transition energy increases linearly with the strength of magnetic field,but the 1s to 2p- transition energy decreases when the strength of magnetic field increases for the small field strength.Compared to the GaAs parabolic well,the donors are more tightly bound to the ZnO parabolic well and the influence of external magnetic field on the binding energy of a donor is much stronger in the ZnO parabolic well.

关键词

parabolic quantum well/ donor/ magnetic field/ 1s → 2p± transition energy

Key words

parabolic quantum well/ donor/ magnetic field/ 1s → 2p± transition energy

引用本文复制引用

Yuan Lihua,Wang Daobin,Chen Yuhong,Zhang Cairong,Pu Zhongsheng,Zhang Haimin..Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well[J].半导体学报,2011,32(8):1-4,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.10647006) and the Youth Science Foundation of Lanzhou University of Technology,China (No.QN200805). (No.10647006)

半导体学报

OACSCDCSTPCDEI

1674-4926

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