半导体学报2011，Vol.32Issue(8)：128-131,4.DOI:10.1088/1674-4926/32/8/085011
A Ka-band 22 dBm GaN amplifier MMIC
A Ka-band 22 dBm GaN amplifier MMIC
摘要
Abstract
A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AIGaN/GaN HEMT with a gate-length of 0.25 μm and a gate-width of 2 × 75 μm.Under Vds =10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5% at 26.5 GHz.The output power density of the AIGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds =10 V.关键词
GaN/ MMIC/ AlGaN/GaN HEMT/ amplifier/ Ka band/ CPWKey words
GaN/ MMIC/ AlGaN/GaN HEMT/ amplifier/ Ka band/ CPW引用本文复制引用
Wang Dongfang,Chen Xiaojuan,Yuan Tingting,Wei Ke,Liu Xinyu..A Ka-band 22 dBm GaN amplifier MMIC[J].半导体学报,2011,32(8):128-131,4.基金项目
Project supported by the National Natural Science Foundation of China (No.60890190). （No.60890190）
