半导体学报2011，Vol.32Issue(9)：70-73,4.DOI:10.1088/1674-4926/32/9/094011
An SPICE model for phase-change memory simulations
An SPICE model for phase-change memory simulations
摘要
Abstract
Along with a series of research works on the physical prototype and properties of the memory cell,an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented.By handling it with the heat distribution algorithm,threshold switching theory and the crystallization kinetic model,the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell.In particular,it can emulate the cell's temperature curve and crystallinity profile during the programming process,which can enable us to clearly understand the PCM's working principle and program process.关键词
phase-change memory/ SPICE/ Verilog-AKey words
phase-change memory/ SPICE/ Verilog-A引用本文复制引用
Li Xi,Song Zhitang,Cai Daolin,Chen Xiaogang,Chen Houpeng..An SPICE model for phase-change memory simulations[J].半导体学报,2011,32(9):70-73,4.基金项目
Project supported by the National Integration Circuit Research Program of China (No.2009ZX02023-003),the National Basic Research Program of China (Nos.2007CB935400,2010CB934300,2011CB309602,2011CB932800),the National Natural Science Foundation of China (Nos.60906004,60906003,61006087,61076121),and the Science and Technology Council of Shanghai (Nos.09QH1402600,1052nm07000). （No.2009ZX02023-003）
