半导体学报2011，Vol.32Issue(8)：104-110,7.DOI:10.1088/1674-4926/32/8/085007
A fast transient response low dropout regulator with current control methodology
A fast transient response low dropout regulator with current control methodology
摘要
Abstract
A transient performance optimized CCL-LDO regulator is proposed.In the CCL-LDO,the control method of the charge pump phase-locked loop is adopted.A current control loop has the feedback signal and reference current to be compared,and then a loop filter generates the gate voltage of the power MOSFET by integrating the error current.The CCL-LDO has the optimized damping coefficient and natural resonant frequency,while its output voltage can be sub-1-V and is not restricted by the reference voltage.With a 1μF decoupling capacitor,the experimental results based on a 0.13 μm CMOS process show that the output voltage is 1.0 V; when the workload changes from 100 μA to 100 mA transiently,the stable dropout is 4.25 mV,the settling time is 8.2 μs and the undershoot is 5.11 mV; when the workload changes from 1 00 mA to 100 μA transiently,the stable dropout is 4.25 mV,the settling time is 23.3 μs and the overshoot is 6.21 mV.The PSRR value is more than -95 dB.Most of the attributes of the CCL-LDO are improved rapidly with a FOM value of 0.0097.关键词
current control loop/ transient response/ LDO/ damping coefficient/ natural resonant frequencyKey words
current control loop/ transient response/ LDO/ damping coefficient/ natural resonant frequency引用本文复制引用
Ma Zhuo,Guo Yang,Duan Zhikui,Xie Lunguo,Chen Jihua,Yu Jinshan..A fast transient response low dropout regulator with current control methodology[J].半导体学报,2011,32(8):104-110,7.基金项目
Project supported by the National New Century Excellent Talents in University,the Program for Changjiang Scholars and Innovative Research Team in University of China,and the National Natural Science Foundation of China (Nos.61076036,60906009). （Nos.61076036,60906009）
