半导体学报2011，Vol.32Issue(9)：119-124,6.DOI:10.1088/1674-4926/32/9/095008
Effect of charge sharing on the single event transient response of CMOS logic gates
Effect of charge sharing on the single event transient response of CMOS logic gates
摘要
Abstract
This paper presents three new types of pulse quenching mechanism (NMOS-to-PMOS,PMOS-to-NMOS and NMOS-to-NMOS) and verifies them using 3-D TCAD mixed mode simulations at the 90 nm node.The three major contributions of this paper are:(1) with the exception of PMOS-to-PMOS,pulse quenching is also prominent for PMOS-to-NMOS and NMOS-to-NMOS in a 90 nm process.(2) Pulse quenching in general correlates weakly with ion LET,but strongly with incident angle and layout style (i.e.spacing between transistors and n-well contact area).(3) Compact layout and cascaded inverting stages can be utilized to promote SET pulse quenching in combinatorial circuits.关键词
single event transient/ charge sharing/ pulse quenching/ 3-D TCAD simulation/ radiation hardeningKey words
single event transient/ charge sharing/ pulse quenching/ 3-D TCAD simulation/ radiation hardening引用本文复制引用
Duan Xueyan,Wang Liyun,Lai Jinmei..Effect of charge sharing on the single event transient response of CMOS logic gates[J].半导体学报,2011,32(9):119-124,6.基金项目
Project supported by the National Natural Science Foundation of China (No.60876015). （No.60876015）
