半导体学报2011，Vol.32Issue(9)：46-49,4.DOI:10.1088/1674-4926/32/9/094005
Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer
Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer
摘要
Abstract
We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material.The electrical characteristics of OFETs are improved with the insertion of Aiq3 film.The peak field effect mobility is increased to 1.28 × 10-2 cm2/(V.s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm.The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.关键词
organic field effect transistors/ buffer layer/ C60/ Alq3/ channel resistanceKey words
organic field effect transistors/ buffer layer/ C60/ Alq3/ channel resistance引用本文复制引用
Zheng Hong,Cheng Xiaoman,Tian Haijun,Zhao Geng..Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer[J].半导体学报,2011,32(9):46-49,4.基金项目
Project supported by the National Natural Science Foundation of China (No.61076065) and the Natural Science Foundation of Tianjin,China (No.07JCYBJC 12700). （No.61076065）
