半导体学报2011，Vol.32Issue(9)：58-61,4.DOI:10.1088/1674-4926/32/9/094008
Optimization of Al2O3/SiNx stacked antireflection structures for N-type surfacepassivated crystalline silicon solar cells
Optimization of Al2O3/SiNx stacked antireflection structures for N-type surfacepassivated crystalline silicon solar cells
摘要
Abstract
In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al2O3/SiNx layer.The effect of SiNx layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al2O3/SiNx layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiNx layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.关键词
antireflection coatings/ aluminum oxide/ silicon nitride/ simulation/ solar cellsKey words
antireflection coatings/ aluminum oxide/ silicon nitride/ simulation/ solar cells引用本文复制引用
Wu Dawei,Jia Rui,Ding Wuchang,Chen Chen,Wu Deqi,Chen Wei,Li Haofeng,Yue Huihui,Liu Xinyu..Optimization of Al2O3/SiNx stacked antireflection structures for N-type surfacepassivated crystalline silicon solar cells[J].半导体学报,2011,32(9):58-61,4.基金项目
Project supported by the State Key Development Program for Basic Research of China (Nos.2006CB604904,2009CB939703),the National Natural Science Foundation of China (Nos.60706023,60676001,90401002,90607022),the Chinese Academy of Sciences (No.YZ0635),and the Chinese Academy of Solar Energy Action Plan. （Nos.2006CB604904,2009CB939703）
