半导体学报2011，Vol.32Issue(9)：62-65,4.DOI:10.1088/1674-4926/32/9/094009
Built-in electric field thickness design for betavoltaic batteries
Built-in electric field thickness design for betavoltaic batteries
摘要
Abstract
Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries:after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multijunction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.关键词
betavoltaic battery/ built-in electric field/ electron-hole pair recombination/ energy depositionKey words
betavoltaic battery/ built-in electric field/ electron-hole pair recombination/ energy deposition引用本文复制引用
Chen Haiyang,Li Darang,Yin Jianhua,Cai Shengguo..Built-in electric field thickness design for betavoltaic batteries[J].半导体学报,2011,32(9):62-65,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.90923039,51025521) and the 111 Project of China (No.B08043). （Nos.90923039,51025521）
