西安理工大学学报2011，Vol.27Issue(3)：261-265,5.
一种带保护电路的低功耗LDO
A Low Power Low Dropout Regulator with Protection Circuits
摘要
Abstract
This paper presents a low power low dropout regulator ( LDO) with protection circuits which shield a chip from fluctuations in supply rails for CMMB application. By employing a low gain low output impedance buffer to drive the gate node of the pass device, phase margin with over 40° is achieved under any load current conditions. To avoid destroy the pass device by the over current and over temperature, the over current protection (OCP) circuit which limits the maximum load current at 150 mA, and the o-ver temperature protection (OTP) circuit which turns off the LDO when the temperature is higher than 145°C , and turns on the LDO when the temperature is lower than 125°C are designed. The input voltage range is 1.5 ~ 3.3 V, and the output voltage is 1.2 V. The LDO with protection circuits has been implemented in a 0. 35 μm CMOS process. It dissipates only 30 μA quiescent current at no load condition and is able to deliver up to 80 mA maximum load current. The chip area of the LDO is 380. 2 μm x 198 μm.关键词
低压降线性调节器/过流保护电路/过热保护电路/相位裕度Key words
low dropout regulator (LDO) / over current protection (OCP) circuit/ over temperature protection (OTP) circuit/phase margin (PM)分类
管理科学引用本文复制引用
杨利君,陈治明,龚正,石寅..一种带保护电路的低功耗LDO[J].西安理工大学学报,2011,27(3):261-265,5.基金项目
国家高技术研究发展计划(863计划)基金资助项目(2009AA011610). （863计划）
