西安理工大学学报2011，Vol.27Issue(3)：306-310,5.
氧气流量对磁控溅射AZO薄膜光电性能的影响
Influence of Oxygen Flux on Optoelectronic Properties of AZO Films Deposited by Magnetron Sputtering Method
摘要
Abstract
AZO films are deposited onto the glass substrates by DC magnetron sputtering method. The influences of oxygen flow on optoelectronic properties and microstructure of AZO are studied . The results show that oxygen flux can dramatically affect the optoelectronic properties and crystalline status of AZO films. The films have excellent transmittance but poor electronic conductivity at an oxygen flux higher than 0.08 x 10 -6 mVs. While the oxygen flux is lower than 0. 04 x 10 -6 mVs, the films deposited exhibit metallic characteristic ( conductive but not transparent). Accordingly, only in a narrow range of oxygen flux AZO films with both high transmittance and low resistivity can be obtained or prepared. The film prepared at 0.06 x 10 -6 mVs oxygen flux has a low resistivity of 2. 39 x 10 -3 Ω · Cm, and a transmittance of above 90% in the visible range.关键词
AZO薄膜/直流反应磁控溅射/氧气流量/光电性能Key words
AZO films/ DC magnetron sputtering/ oxygen flux/ optoelectronic properties分类
数理科学引用本文复制引用
丁宇,蒋百灵,田亚萍,马二云,张晓静,曹智睿,赵志明..氧气流量对磁控溅射AZO薄膜光电性能的影响[J].西安理工大学学报,2011,27(3):306-310,5.基金项目
陕西省重点学科建设专项资金资助项目(101-00X901) （101-00X901）
陕西省自然科学基金资助项目(101-221007). （101-221007）
