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Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

Lei Tianfei Luo Xiaorong Ge Rui Chen Xi Wang Yuangang Yao Guoliang Jiang Yongheng Zhang Bo Li Zhaoji

半导体学报2011，Vol.32Issue(10)：49-52,4.

半导体学报2011，Vol.32Issue(10)：49-52,4.DOI:10.1088/1674-4926/32/10/104004

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

Lei Tianfei ¹Luo Xiaorong ²Ge Rui ³Chen Xi ¹Wang Yuangang ¹Yao Guoliang ¹Jiang Yongheng ¹Zhang Bo ¹Li Zhaoji¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
3. No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, China
折叠

摘要

Abstract

An ultra-low specific on-resistance (Ron,sp) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed.The MOSFET features double gates and an oxide trench:the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide.Firstly,the double gates reduce Ron,sp by forming dual conduction channels.Secondly,the oxide trench not only folds the drift region,but also modulates the electric field,thereby reducing device pitch and increasing the breakdown voltage (BV).A BV of 93 V and a Ron,sp of 51.8 mΩ·mm2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch.Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET),the Ron,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV,respectively.

关键词

double gates/ trench/ specific on-resistance/ breakdown voltage

Key words

double gates/ trench/ specific on-resistance/ breakdown voltage

引用本文复制引用

Lei Tianfei,Luo Xiaorong,Ge Rui,Chen Xi,Wang Yuangang,Yao Guoliang,Jiang Yongheng,Zhang Bo,Li Zhaoji..Ultra-low specific on-resistance SOI double-gate trench-type MOSFET[J].半导体学报,2011,32(10):49-52,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60806025,60976060),the National Key Laboratory of Analogy Integrated Circuit (No.9140C090304110C0905),and the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (No.CXJJ201004). （Nos.60806025,60976060）

半导体学报

OACSCDCSTPCDEI

ISSN：1674-4926

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