半导体学报2011,Vol.32Issue(10):103-112,10.DOI:10.1088/1674-4926/32/10/105004
Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application
Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application
摘要
Abstract
A new optimization method of a source inductive degenerated low noise amplifier (LNA) with electrostatic discharge protection is proposed.It can achieve power-constrained simultaneous noise and input matching.An analysis of the input impedance and the noise parameters is also given.Based on the developed method,a 2.4 GHz LNA for wireless sensor network application is designed and optimized using 0.18-μm RF CMOS technology.The measured results show that the LNA achieves a noise figure of 1.59 dB,a power gain of 14.12 dB,an input 1 dB compression point of-8 dBm and an input third-order intercept point of 1 dBm.The DC current is 4 mA under a supply of 1.8 V.关键词
LNA/ ESD protection/ noise and input impedance matching/ CMOSKey words
LNA/ ESD protection/ noise and input impedance matching/ CMOS引用本文复制引用
Li Zhiqun,Chen Liang,Zhang Hao..Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application[J].半导体学报,2011,32(10):103-112,10.基金项目
Project supported by the National High Technology Research and Development Program of China (No.2007AA01Z2A7) and the 5th Program of Six Talent Summits of Jiangsu Province,China. (No.2007AA01Z2A7)