云南师范大学学报（自然科学版）2011，Vol.31Issue(5)：28-32,5.
PECVD氮化硅薄膜工艺参数研究
Optimized the Parameters in Process of PECVD Deposition Silicon Nitride Film
张树明 1廖华 2何京鸿 1尹云坤 1胡俊涛 3罗群3
作者信息
- 1. 云南师范大学太阳能研究所,云南昆明650092
- 2. 昆明医学院,云南昆明650032
- 3. 云南天达光伏科技股份有限公司,云南昆明650092
- 折叠
摘要
Abstract
According to the structure of solar modules and the performance of encapsulating material, the best antireflection film thickness and refractive index have been designed for silicon solar cell, and the technical parameters have been optimized with TAYLOR formula. Through the experiments, the good deposition parameters have been obtained for CETC-48th tube PECVD equipment.关键词
PECVD氮化硅减反射膜/工艺参数/优化Key words
PECVD silicon nitride film/Parameters/Optimization分类
能源科技引用本文复制引用
张树明,廖华,何京鸿,尹云坤,胡俊涛,罗群..PECVD氮化硅薄膜工艺参数研究[J].云南师范大学学报（自然科学版）,2011,31(5):28-32,5.
