发光学报2011，Vol.32Issue(9)：896-901,6.DOI:10.3788/fgxb20113209.0896
国产SiC衬底上利用AIN缓冲层生长高质量GaN外延薄膜
High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition
摘要
Abstract
GaN is considered as a promising material for high power, high temperature and high frequency microwave applications, due to the wide band gap, high thermal stability and high breakdown voltage. Due to lack of suited homosubstrates, GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications. However, it is difficult to obtain high quality GaN because of the 33. 1% mismatch of thermal expansion coefficients and the large lattice mismatch (3.5%) between GaN and SiC. In this paper, GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition. Sampies employing high temperature A1N as buffer layers produce high quality GaN epitaxial layers.Five samples with different A1N buffer layers were prepared. The effects of the growth parameters of A1N buffer layers on characterizations of GaN were studied. The highest quality GaN layer grown on SiC substrate with A1N buffer was obtained by optimizing the growth parameters of the A1N buffer. The full width at half maximum of High-resolution X-ray diffraction on-axis (0002) and off-axis (1012) diffraction are 130 arcsec and 252 arcsec, respectively. The values are the best result of GaN grown on homemade 6H-SiC. The quality of GaN layers will be deteriorated by increasing the thickness or the growth V/E ratio of A1N buffer layers, while the low growth temperature of A1N buffers also deteriorate the quality of GaN layers. The strain in GaN also has been studied. It is found that the GaN layer with narrow XRC FWHM has less stress intensity.关键词
GaN/AlN/SiC衬底/MOCVD/X射线衍射Key words
GaN/ A1N/ SiC/ MOCVD/ XRD分类
数理科学引用本文复制引用
陈耀,王文新,黎艳,江洋,徐培强,马紫光,宋京,陈弘..国产SiC衬底上利用AIN缓冲层生长高质量GaN外延薄膜[J].发光学报,2011,32(9):896-901,6.基金项目
国家自然科学基金(50872146,60877006,60890192/F0404) （50872146,60877006,60890192/F0404）
科技部973(2010CB327501)资助项目 （2010CB327501）
