发光学报2011，Vol.32Issue(9)：924-928,5.DOI:10.3788/fgxb20113209.0924
快速热退火对Co/Si0.85Geo.15肖特基结电学特性的影响
Effects of Rapid Thermal Annealing on The Physical and Electrical Properties of Co/Sputtered-Si1 -xGex Schottky Junction
王光伟 1姚素英 2肖夏 1徐文慧1
作者信息
- 1. 天津大学电信学院,天津300072
- 2. 天津职业技术师范大学电子工程学院,天津300222
- 折叠
摘要
Abstract
Si1-xGex films were deposited by ion beam sputtering on SiO2 and monocrystalline Si substrates respectively. The Si1-xGex films were doped with phosphorus and boron respectively through thermal diffusion to form n- and p-type films. The Si1-xGex film is polycrystalline. And the Co/poly-Si1-xGex Schottlcy junctions were performed. The surface roughness and electrical properties were measured right after they were dealt with rapid thermal annealing (RTA) at different temperatures. With the increasing of annealing temperature, the surface roughness and the ideal factor characterizing the Schottky contact deviation from ideal status increase, while the Schottky barrier height (SBH) just changes slightly. The interfacial defect density increases with the annealing temperature increase, which is the main reason for the ideal factor going up. The Fermi level pinning effect originating from the interfacial state and Cobalt Germanium silicides formed by solid state reaction having almost the same work function with Cobalt itself are the two principal aspects responsible for nearly invariant SBH.关键词
快热退火/肖特基结/肖特基势垒高度/电学特性Key words
rapid thermal annealing/ Shottky junction/ Shottky barrier height/ electrical characteristics分类
数理科学引用本文复制引用
王光伟,姚素英,肖夏,徐文慧..快速热退火对Co/Si0.85Geo.15肖特基结电学特性的影响[J].发光学报,2011,32(9):924-928,5.
