原子能科学技术2011，Vol.45Issue(7)：884-887,4.
脉冲激光背照射单粒子效应实验研究
Backside Piuse Laser Testing for Single Event Effect
王德坤 1曹洲 1刘海南 2杨献2
作者信息
- 1. 兰州空间技术物理研究所真空低温技术与物理国家级重点实验室,甘肃兰州 730000
- 2. 中国科学院微电子研究所,北京100029
- 折叠
摘要
Abstract
To deal with the increasing metal layers in the front side of integrated circuit,the backside single event effects laser testing method based on the experimental resultsof the unhardened SRAM IL-2 and the hardened SRAM 1020-2 was presented. Theproblems that involved backside laser testing were discussed. The hardened validity wasobtained by comparing the effective energy threshold between both samples.关键词
单粒子效应/SRAM/背面辐照/脉冲激光/抗辐射加固Key words
single event effect/ SRAM/ irradiation from the backside/ pulse laser/ radiation hardened分类
信息技术与安全科学引用本文复制引用
王德坤,曹洲,刘海南,杨献..脉冲激光背照射单粒子效应实验研究[J].原子能科学技术,2011,45(7):884-887,4.
