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大功率垂直腔面发射激光器列阵的串接结构

史晶晶 秦莉 刘迪 彭航宇 曹军胜 杨晔 宁永强 刘云 王立军

光学精密工程2011,Vol.19Issue(10):2309-2313,5.
光学精密工程2011,Vol.19Issue(10):2309-2313,5.DOI:10.3788/OPE.20111910.2309

大功率垂直腔面发射激光器列阵的串接结构

High-power vertical cavity surface emitting laser array in series structure

史晶晶 1秦莉 2刘迪 1彭航宇 1曹军胜 2杨晔 1宁永强 2刘云 1王立军1

作者信息

  • 1. 中国科学院长春光学精密机械与物理研究所激发态物理国家重点实验室,吉林长春130033
  • 2. 中国科学院研究生院,北京100039
  • 折叠

摘要

Abstract

For increasing the output powers without improving drive currents to high power VerticalCavity Surface Emitting Lasers(VCSELs),a VCSEL in series structure was presented.First,theVCSEL chips were soldered on a A1N ceramic heat sink,then the chips were connected by a wirebonding in series.The output powers of four-chip devices in series,tWO-chip devices in series and asingle device were measured under microsecond and nanosecond pulses,which are 775,416,217 mWand 18.9,9.8,5 W,respectively.Test results show that the output powers of the first tWO kinds ofdevices in series are about 4 times and twice that of the single device.Moreover.The Full Width atHalf Maximum(FWHM)of multiple-chip devices in series is slightly wider than that of the single device,which can be improved by choosing good uniformity cascade chips.In conclusion,the VCSEL inseries structure can increase the output power without improving the drive current.

关键词

垂直腔面发射激光器/输出功率/串联

Key words

Vertical Cavity Surface Emitting Laser(VCSEL)/output power/series

分类

信息技术与安全科学

引用本文复制引用

史晶晶,秦莉,刘迪,彭航宇,曹军胜,杨晔,宁永强,刘云,王立军..大功率垂直腔面发射激光器列阵的串接结构[J].光学精密工程,2011,19(10):2309-2313,5.

基金项目

国家自然科学基金重点项目(No.90923037) (No.90923037)

吉林省科技发展计划资助项目(No.20080335) (No.20080335)

光学精密工程

OA北大核心CSCDCSTPCD

1004-924X

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