发光学报2011，Vol.32Issue(10)：1004-1008,5.DOI:10.3788/fgxb20113210.1004
射频磁控溅射法制备的Eu掺杂ZnO薄膜的结构及其发光性质
Structural and Photoluminescence Properties of Eu-doped ZnO Thin Films Grown by RF Magnetron Sputtering
摘要
Abstract
ZnO: Eu3 + thin films were deposited on quartz substrates by radio frequency( RF) magnetron sputtering. The lattice structure, surface morphology and photoluminescence (PL) properties were analyzed by X-ray diffractometer (XRD) ,scanning electron microscope (SEM) and spectrometer, respectively. Effects of RF sputtering power and heat treatment on the structure and PL properties were studied in detail. The results showed that all the ZnO films had a hexagonal wurtzite structure and a higher RF sputtering power was beneficial to (002) preferred orientation. The films' grains grew up as the RF sputtering power and heat treatment temperature increased. Moreover, we observed the phenomenon of electron transitions in intra-4f shell of Eu3 + and energy transfer from ZnO host to the doped Eu3 + in these ZnO: Eu3 + films. Besides, as the RF sputtering power increased and after annealed at 780 ℃ , the PL properties of ZnO: Eu3 + films were obviously improved.关键词
ZnO: Eu3+/光致发光/磁控溅射Key words
ZnO: Eu3 + / photoluminescence/ magnetron sputtering分类
数理科学引用本文复制引用
高振杰,杨元政,谢致薇,王彦利..射频磁控溅射法制备的Eu掺杂ZnO薄膜的结构及其发光性质[J].发光学报,2011,32(10):1004-1008,5.基金项目
国家自然科学基金(50771037) （50771037）
高等学校博士学科点专项科研基金(200805620004)资助项目 （200805620004）
