发光学报2011，Vol.32Issue(10)：1057-1063,7.DOI:10.3788/fgxb20113210.1057
光/电激发方式对AlGaInP及GaN基LED电学特性的影响
Influence of Optical/Electrical Excitating Style on The Deality Factor of AlGaInP and GaN-based LEDs
摘要
Abstract
The electrical characteristic of AlGaInP ard InGaN/GaN-based LEDs were measured and explored under optical and electrical excitation. One of the significant parameter of LED characteristic, n, was mainly taken into consideration under the two varied excitation styles. The results showed that both junction temperature and injecting intensity of carrier influenced n. The essential performance of devices was gained within injecting intensity range where the action of space-charge region plays the most important role on current transferring. We found n, obtained in different motivation conditions, is independent on the excitation ways. Therefore, optical excitation can be applied to take place of electrical excitation for the non-contact detection of n in LEDs.关键词
理想因子/发光二极管(LED)/光激励/电激励/结温Key words
ideality factor/ light-emitting diode/ optical excitation/ electrical excitation/ junction temperature分类
信息技术与安全科学引用本文复制引用
文静,庄伟,文玉梅,李平,赵学梅,马跃东..光/电激发方式对AlGaInP及GaN基LED电学特性的影响[J].发光学报,2011,32(10):1057-1063,7.基金项目
国家自然科学基金(61006053,60676031) （61006053,60676031）
重庆市科委自然科学基金计划(CSTC,2008BB3156) （CSTC,2008BB3156）
重庆市科技攻关(CSTC,2009 AC4186)资助项目 （CSTC,2009 AC4186）
