铸造技术2011，Vol.32Issue(10)：1368-1371,4.
多晶硅定向生长的数值模拟研究
Research on Numerical Simulation for the Directional Growth of Polycrystalline Silicon
摘要
Abstract
In this paper, based on the finite element COMSOL Multiphysics3. 5 (a) software, numerical simulation of directional solidification process for the polycrystalline silicon was conducted. The distributions of the temperature field for the melting and crystallization process of polycrystalline silicon were obtained. By analyzing this simulated results the process of polycrystalline silicon melting and the shape of solid-liquid interface were obtained. It will provide an important theoretical basis for optimizing technological program and defects analyzing in the follow-up productive practice.关键词
多晶硅/定向凝固/数值模拟/温度场Key words
Polycrystalline silicon/ Directional solidification/ Numerical simulation/ Temperature field分类
矿业与冶金引用本文复制引用
罗玉峰,胡云,张发云,廖宾,张斌..多晶硅定向生长的数值模拟研究[J].铸造技术,2011,32(10):1368-1371,4.基金项目
2009年校级招标课题资助项目(xj0901)和2010江西省教育厅科技项目(GJJ10647) （xj0901）
