电子器件2011，Vol.34Issue(5)：494-497,4.DOI:10.3969/j.issn.1005-9490.2011.05.003
MFS结构钛酸铋铁电薄膜掺铌改性研究
Research on Ferroelectric Properties of Nb-Doped Bi4 Ti3 O12 with MFS Structure
摘要
Abstract
To fulfill the need of ferroelectric storage with MFS structure, Bi4Ti3O12 films was prepared on p-Si substrate, whose B site Ti element was replaced by Nb element. The Ag electrode was then grown on the surface of the films using electroplating method to form the MFS structure. We researched on the effects of the amount of Nb to the structures and the ferroelectric properties of the films. The Researches show that with the 650 ℃ anneal temperature and the 2% replaced Ti by Nb, the BTN films get the best crystal structure and the best ferroelectric properties with Pr=19.01 Μc/cm2 and Ec = 200 Kv/cm.关键词
铁电薄膜/铁电存储器/钛酸铋/溶胶-凝胶工艺/B位掺杂/铌元素Key words
ferroelectric films/ferroelectric storage/Bi4Ti3O12/Sol-Gel,B site doped/Nb element分类
通用工业技术引用本文复制引用
左伟华,万莉莉..MFS结构钛酸铋铁电薄膜掺铌改性研究[J].电子器件,2011,34(5):494-497,4.基金项目
湖南省怀化学院院级优秀青年项目(HHUQ2008-02) （HHUQ2008-02）
