电子器件2011，Vol.34Issue(5)：558-561,4.DOI:10.3969/j.issn.1005-9490.2011.05.019
0.18μm NMOS的重离子单粒子瞬态脉冲的仿真模拟
0.18 μm NMOS Heavy Ion Single Event Transient Simulation
摘要
Abstract
For a detailed understanding of the nano-MOS Single Event Transient charge collection mechanism, simulation of the single event transient of 0. 18 μm NMOS by using the ISETCAD software is made. By connecting three different circuits and choosing different positions of particles in the simulation, a series of single-event transient current pulse( SET) versus time is obtained. An analysis of the influence of the different circuits and positions on the pulse width and magnitude of the SET is made. A basic research has been done for establishing the precise mode of SET in the future.关键词
ISE仿真/NMOS/单粒子瞬态脉冲/单粒子注入位置Key words
ISE simulation/ NMOS/Single Event Transient/Location of single ion implantation分类
信息技术与安全科学引用本文复制引用
李飞,安海华..0.18μm NMOS的重离子单粒子瞬态脉冲的仿真模拟[J].电子器件,2011,34(5):558-561,4.
