半导体学报2011，Vol.32Issue(3)：1-5,5.DOI:10.1088/1674-4926/32/3/032001
Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD
Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD
摘要
Abstract
Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.关键词
microcrystalline silicon/ jet-ICPCVD/ high rate/ convective transfer/ crystallinityKey words
microcrystalline silicon/ jet-ICPCVD/ high rate/ convective transfer/ crystallinity引用本文复制引用
Zuo Zewen,Guan Wentian,Xin Yu,Lü Jin,Wang Junzhuan,Pu Lin,Shi Yi,Zheng Youdou..Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD[J].半导体学报,2011,32(3):1-5,5.基金项目
Project supported by the National Natural Science Foundation of China (No.60990314) and the State Key Development Program for Basic Research of China (No.2007CB936300). （No.60990314）
