半导体学报2011，Vol.32Issue(3)：131-134,4.DOI:10.1088/1674-4926/32/3/035009
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
摘要
Abstract
A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and +80 ℃.关键词
GaAs HBT/ power amplifier/ temperature compensation/ on chipKey words
GaAs HBT/ power amplifier/ temperature compensation/ on chip引用本文复制引用
Li Chengzhan,Chen Zhijian,Huang Jiwei,Wang Yongping,Ma Chuanhui,Yang Hanbing,Liao Yinghao,Zhou Yong,Liu Bin..An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier[J].半导体学报,2011,32(3):131-134,4.基金项目
Project supported by the Breakthroughs in Key Areas of Guangdong and Hong Kong Project (No.2008A010100012). （No.2008A010100012）
