半导体学报2011，Vol.32Issue(3)：135-139,5.DOI:10.1088/1674-4926/32/3/036001
MOS structure fabrication by thermal oxidation of multilayer metal thin films
MOS structure fabrication by thermal oxidation of multilayer metal thin films
Mohammad Orvatiniat 1Atefeh Chahkoutahi2
作者信息
- 1. Electron Engineering Department, Information and Communication Technology(ICT)Faculty, ICT Ministry of Iran,Tehran 16315-746, Iran
- 2. Bushehr Azad University, Bushehr, Iran
- 折叠
摘要
Abstract
A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy.This two-layer structure was thermally oxidized at 400 ℃ for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.关键词
MOS structure/ electrochemical deposition/ thermal oxidation/ C-V curveKey words
MOS structure/ electrochemical deposition/ thermal oxidation/ C-V curve引用本文复制引用
Mohammad Orvatiniat,Atefeh Chahkoutahi..MOS structure fabrication by thermal oxidation of multilayer metal thin films[J].半导体学报,2011,32(3):135-139,5.
