半导体学报2011，Vol.32Issue(11)：148-151,4.DOI:10.1088/1674-4926/32/11/115014
Indium bump array fabrication on small CMOS circuit for flip-chip bonding
Indium bump array fabrication on small CMOS circuit for flip-chip bonding
Huang Yuyang 1Zhang Yuxiang 1Yin Zhizhen 1Cui Guoxin 1Liu H C 1Bian Lifeng 2Yang Hui 1Zhang Yaohui1
作者信息
- 1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
- 2. Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
- 折叠
摘要
Abstract
We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator.A chip holder with a via hole is used to coat the photoresist for indium bump lift-off.The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500μm,which ensures the integrity of the indium bump array.64 × 64 indium arrays with 20 μm-high,30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm2 CMOS chip.关键词
flip-chip bonding/ indium bump/ array/ small-sizeKey words
flip-chip bonding/ indium bump/ array/ small-size引用本文复制引用
Huang Yuyang,Zhang Yuxiang,Yin Zhizhen,Cui Guoxin,Liu H C,Bian Lifeng,Yang Hui,Zhang Yaohui..Indium bump array fabrication on small CMOS circuit for flip-chip bonding[J].半导体学报,2011,32(11):148-151,4.
