半导体学报2011，Vol.32Issue(11)：65-68,4.DOI:10.1088/1674-4926/32/11/114006
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Ji Panfeng 1Liu Naixin 1Wei Tongbo 1Liu Zhe 1Lu Hongxi 1Wang Junxi 1Li Jinmin1
作者信息
- 1. Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 折叠
摘要
Abstract
With an n-AlGaN (4 nm)/GaN (4 nm) superlattice (SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-A1GaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL.The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-A1GaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543 μA,and the electro-static discharge (ESD) pass yield of an LED at human body mode (HBM)-ESD impulses of 2000 V increases from 60% to 90%.关键词
n-AlGaN/GaN superlattices/ wall plug efficiency/ droop/ reverse currentKey words
n-AlGaN/GaN superlattices/ wall plug efficiency/ droop/ reverse current引用本文复制引用
Ji Panfeng,Liu Naixin,Wei Tongbo,Liu Zhe,Lu Hongxi,Wang Junxi,Li Jinmin..Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J].半导体学报,2011,32(11):65-68,4.
