半导体学报2011，Vol.32Issue(11)：69-71,3.DOI:10.1088/1674-4926/32/11/114007
Improved ⅢI-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
Improved ⅢI-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
摘要
Abstract
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs),the strain in the epilayer was increased,the dislocation density was reduced.GaN-based LEDs with different Al compositions were compared.6.8% A1 composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.关键词
A1GaN/GaN stacks/ light-emitting diodes/ dislocation density/ ESDKey words
A1GaN/GaN stacks/ light-emitting diodes/ dislocation density/ ESD引用本文复制引用
Li Zhicong,Wang Guohong,Li Jinmin,Li Panpan,Wang Bing,Li Hongjian,Liang Meng,Yao Ran,Li Jing,Deng Yuanming,Yi Xiaoyan..Improved ⅢI-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J].半导体学报,2011,32(11):69-71,3.基金项目
Project supported by the National High Technology Research and Development Program of China (No.2008AA03A 197). （No.2008AA03A 197）
