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High performance QVCO design with series coupling in CMOS technology

Cai Li Huang Lu Ying Yutong Fu Zhongqian Wang Weidong

半导体学报2011,Vol.32Issue(11):88-93,6.
半导体学报2011,Vol.32Issue(11):88-93,6.DOI:10.1088/1674-4926/32/11/115004

High performance QVCO design with series coupling in CMOS technology

High performance QVCO design with series coupling in CMOS technology

Cai Li 1Huang Lu 2Ying Yutong 2Fu Zhongqian 2Wang Weidong1

作者信息

  • 1. Department of Electronics Engineering and Information Science, University of Science and Technology of China,Hefei 230027, China
  • 2. Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China
  • 折叠

摘要

Abstract

A high performance quadrature voltage-controlled oscillator (QVCO) is presented.It has been fabricated in SMIC 0.18μm CMOS technology with top thick metal.The proposed QVCO employed cascade serial coupling for in phase and quadrature phase signal generation.Source degeneration capacitance is added to the NMOS differential pair to suppress their flicker noise from up-conversion to close in phase noise.A dedicated low noise and high power supply rejection low drop out regulator is used to supply this QVCO.The measured phase noise of the proposed QVCO achieves phase noise of-123.3 dBc/Hz at an offset frequency of 1 MHz from the carrier of 4.78 GHz,while the QVCO core circuit and LDO draw 6 mA from a 1.8 V supply.The QVCO can operate from 4.09 to 4.87 GHz (17.5%).Measured tuning gain of the QVCO (Kvco) spans from 44.5 to 66.7 MHz/V.The chip area excluding the pads and ESD protection circuit is 0.41 mm2.

关键词

QVCO/ CMOS/ 1/f noise/ phase noise/ series coupling

Key words

QVCO/ CMOS/ 1/f noise/ phase noise/ series coupling

引用本文复制引用

Cai Li,Huang Lu,Ying Yutong,Fu Zhongqian,Wang Weidong..High performance QVCO design with series coupling in CMOS technology[J].半导体学报,2011,32(11):88-93,6.

基金项目

Project supported by the Ministry of Industry and Information Technology of China (No.2009ZX03006-009). (No.2009ZX03006-009)

半导体学报

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1674-4926

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