Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implantsOACSCDCSTPCD
Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
In order to increase collection efficiency and eliminate image lag,multi n-type implants were introduced into the process of a pinned-photodiode.For the purpose of improving the collection efficiency,multi n-type implants with different implant energies were proposed,which expanded the vertical collection region.To reduce the image lag,a horizontal gradient doping concentration eliminating the potential barrier was also formed by multi n-type implants.…查看全部>>
Li Weiping;Xu Jiangtao;Xu Chao;Li Binqiao;Yao Suying
School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electronic and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electronic and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electronic and Information Engineering, Tianjin University, Tianjin 300072, ChinaSchool of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China
CMOS image sensor photodiode collection efficiency charge transfer image lag
CMOS image sensor photodiode collection efficiency charge transfer image lag
《半导体学报》 2011 (12)
90纳米以下高性能CMOS图像传感器关键技术研究
91-94,4
Project supported by the National Natural Science Foundation of China(Nos.61036004,60976030).
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