半导体学报2011，Vol.32Issue(3)：17-20,4.DOI:10.1088/1674-4926/32/3/033002
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
摘要
Abstract
A homemade 7 × 2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown.The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers,blue LED chips with area of 350 × 350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.关键词
MOCVD/ GaN/ InGaN/GaN MQWs/ LEDKey words
MOCVD/ GaN/ InGaN/GaN MQWs/ LED引用本文复制引用
Yin Haibo,Wang Xiaoliang,Ran Junxue,Hu Guoxin,Zhang Lu,Xiao Hongling,Li Jing,Li Jinmin..High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J].半导体学报,2011,32(3):17-20,4.基金项目
Project supported by the National High Technology Research and Development Program of China (No.2006AA03A141),the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No.YYYJ-0701-02),the National Natural Science Foundation of China (Nos.60890193,60906006),the State Key Development Program for Basic Research of China (Nos.2006CB604905,2010CB327503),and the Knowledge Innovation Program of the Chinese Academy of Sciences (Nos.ISCAS2008T01,ISCAS2009L01,1SCAS2009L02). （No.2006AA03A141）
