半导体学报2011，Vol.32Issue(3)：42-48,7.DOI:10.1088/1674-4926/32/3/034001
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
摘要
Abstract
To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator (SGOI) n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs),this paper proposes a novel device called double step buried oxide (BOX) SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.关键词
self-heating effect/ step BOX/ SGOI/ mobility model/ numerical analysisKey words
self-heating effect/ step BOX/ SGOI/ mobility model/ numerical analysis引用本文复制引用
Li Bin,Liu Hongxia,Li Jin,Yuan Bo,Cao Lei..Numerical analysis of the self-heating effect in SGOI with a double step buried oxide[J].半导体学报,2011,32(3):42-48,7.基金项目
Project supported by the National Natural Science Foundation of China (Nos.60976068,60936005),the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (No.708083),and the Specialized Research Fund for the Doctoral Program of Higher Education,China (No.200807010010). （Nos.60976068,60936005）
